|
PHOTO
TRANSISTORS
 |
||||||
|
|
||||||
 (NPN SILICON PHOTO TRANSISTOR WITH DAY LIGHT FILTER) |
||||||
|
|
||||||
ELECTRO-OPTICAL
CHARACTERISTICS
|
||||||
|
PARAMETER |
SYMBOL |
MIN |
TYP |
MAX |
UNIT |
TEST CONDITION |
|
Collector-Emitter
Breakdown Voltage |
VBR
CEO |
30 |
60 |
110 |
V |
IC = 100µA IB = 0 |
|
Emitter-Collector
Breakdown Voltage |
VBR
ECO |
5 |
9 |
|
V |
IE = 100µA IB = 0 |
|
Collector
Dark Current |
ICEO |
|
|
100 |
nA |
VCE
= 10V |
|
Rise
/ Fall Time |
Tr / Tf |
|
15/15 |
|
µs |
VCE
= 5V IC = 1mA, RL
= 1000Ω |
|
|
VCE (SAT) |
|
0.06 |
0.3 |
V |
IC = 2mA IB = 100µA |
|
Current
Gain |
HFE |
800 |
|
1800 |
|
VCE
= 5V IC = 2mA |
ABSOLUTE
MAXIMUM RATINGS AT 25°C
|
||||||
|
Power
Dissipation |
PD |
|
|
100 |
mw |
|
|
Collector-Emitter
Voltage |
VCE |
|
|
30 |
V |
|
|
Emitter-Collector
Voltage |
VEC |
|
|
5 |
V |
|
|
Collector
Current |
IC |
|
|
25 |
mA |
|
